EF High Voltage Power MOSFETs

Vishay / Siliconix EF High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Förpackning
Vishay / Siliconix MOSFET:er EF Series Pwr MOSFET w/Fast Body Diode
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8 004På lager
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Si SMD/SMT N-Channel 1 Channel 600 V 29 A 102 mOhms - 30 V, 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Bulk
Vishay / Siliconix MOSFET:er TO247 600V 8.4A N-CH MOSFET
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832På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.4 A 168 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET:er EF Series Pwr MOSFET w/Fast Body Diode
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2 606På lager
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Si Through Hole N-Channel 1 Channel 600 V 29 A 102 mOhms - 30 V, 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET:er Nch 600V Vds 30V Vgs TO-220AB; w/diode
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1 735På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms - 30 V, 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO220 600V 8.4A N-CH MOSFET
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1 520På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 8.4 A 193 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET:er Nch 600V Vds 30V Vgs TO-220; w/diode
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1 048På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 182 mOhms - 30 V, 30 V 2 V 96 nC - 55 C + 150 C 33 W Enhancement Tube

Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs TO-247AC
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339På lager
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Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs PowerPAK 8 x 8
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3 000På lager
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Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 15 A 225 mOhms - 30 V, 30 V 4 V 48 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET:er N-CHANNEL 600V
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Produktkommenterarer
7 616På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 176 mOhms - 30 V, 30 V 4 V 84 nC - 55 C + 150 C 227 W Enhancement Bulk
Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs D2PAK (TO-263)
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835På lager
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 156 mOhms - 30 V, 30 V 2 V 122 nC - 55 C + 150 C 250 W Enhancement Tube
Vishay / Siliconix MOSFET:er Nch 600V Vds 30V Vgs TO-263; w/diode
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1 715På lager
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 19 A 182 mOhms - 30 V, 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube
Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs PowerPAK 8 x 8
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2 927På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 11 A 332 mOhms - 30 V, 30 V 4 V 35 nC - 55 C + 150 C 130 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET:er 600V Vds 30V Vgs PowerPAK 8 x 8
Datablad
2 920På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 600 V 25 A 117 mOhms - 30 V, 30 V 4 V 77 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs PowerPAK 8 x 8
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2 920På lager
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Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 650 V 23 A 130 mOhms - 30 V, 30 V 4 V 77 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET:er 650V Vds 30V Vgs TO-247AD
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434På lager
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Si Tube
Vishay / Siliconix MOSFET:er 600V Vds 30V Vgs PowerPAK 8 x 8
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2 996På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 600 V 16 A 220 mOhms - 30 V, 30 V 4 V 41 nC - 55 C + 150 C 147 W Enhancement Reel, Cut Tape, MouseReel

Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs TO-247AC
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440På lager
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Si Through Hole TO-247AC-3 Tube
Vishay / Siliconix MOSFET:er TO263 600V 8.4A N-CH MOSFET
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946På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 8.4 A 168 mOhms - 30 V, 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFET:er EF Series Pwr MOSFET w/Fast Body Diode
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1 067På lager
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Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms - 30 V, 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Tube
Vishay / Siliconix MOSFET:er EF Series Pwr MOSFET w/Fast Body Diode
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461På lager
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Si Through Hole N-Channel 1 Channel 600 V 48 A 52 mOhms - 30 V, 30 V 5 V 67 nC - 55 C + 150 C 278 W Enhancement Bulk
Vishay / Siliconix MOSFET:er TO220 800V 20A N-CH MOSFET
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1 540På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 20 A 170 mOhms - 30 V, 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube
Vishay / Siliconix MOSFET:er 650V Vds; 30V Vgs TO-247AC
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98På lager
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Si Through Hole TO-247AC-3 N-Channel 1 Channel 600 V 80 A 32 mOhms - 30 V, 30 V 2 V 400 nC - 55 C + 150 C 520 W Enhancement Tube
Vishay / Siliconix MOSFET:er TO247 800V 20A N-CH MOSFET
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1 397På lager
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Si Through Hole TO-247AC-3 N-Channel 1 Channel 800 V 20 A 170 mOhms - 30 V, 30 V 4 V 60 nC - 55 C + 150 C 208 W Enhancement Tube

Vishay / Siliconix MOSFET:er 650V Vds 30V Vgs TO-247AC
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475Förväntad 2026-08-03
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 63 mOhms - 30 V, 30 V 4 V 185 nC - 55 C + 150 C 417 W Enhancement Tube
Vishay / Siliconix MOSFET:er Nch 600V Vds 30V Vgs TO-247AC; w/diode
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500Finns på lager
Mer info finns
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 19 A 182 mOhms - 30 V, 30 V 2 V 96 nC - 55 C + 150 C 179 W Enhancement Tube