3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.

Resultat: 86
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Typ Minnesstorlek Databussbredd Maximal klockfrekvens Paket/låda Organisation Åtkomsttid Minimal matningsspänning Maximal matningsspänning Minsta drifttemperatur Maximal drifttemperatur Serie Förpackning
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) RoHS, IT 667På lager
348Förväntad 2026-04-22
Min.: 1
Multipla: 1
Max.: 188

SDRAM 64 Mbit 16 bit 166 MHz BGA-54 4 M x 16 5.4 ns 3 V 3.6 V - 40 C + 85 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS 239På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 64 Mbit 32 bit 143 MHz BGA-90 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS 151På lager
Min.: 1
Multipla: 1
Max.: 58

SDRAM 64 Mbit 32 bit 166 MHz TSOP-II-86 2 M x 32 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 143 Mhz, 54 ball BGA (8mmx8mm) RoHS 332På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 64 Mbit 16 bit 143 MHz BGA-54 4 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT 5 243På lager
Min.: 1
Multipla: 1
Max.: 182

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS 445På lager
Min.: 1
Multipla: 1
Max.: 79

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16320F
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin Copper TSOP II (400 mil) RoHS, IT 872På lager
Min.: 1
Multipla: 1
Max.: 265

SDRAM 512 Mbit 16 bit 167 MHz TSOP-II-54 32 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16320F
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS, IT 234På lager
Min.: 1
Multipla: 1
Max.: 16

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS 2 427På lager
Min.: 1
Multipla: 1
Max.: 1 298

SDRAM 16 Mbit 16 bit 166 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16100H
ISSI DRAM 256M 16Mx16 166MHz SDR SDRAM, 3.3V 626På lager
Min.: 1
Multipla: 1
Max.: 253

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 16 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 32Mb 2Mx16 133MHz Mobile SDRAM 982På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM Mobile 32 Mbit 16 bit 133 MHz BGA-54 2 M x 16 5.5 ns 2.7 V 3.6 V - 40 C + 85 C IS42SM16200D Tray
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS 502På lager
Min.: 1
Multipla: 1
Max.: 235

SDRAM 256 Mbit 32 bit 166 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800J
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS 3 711På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 16 Mbit 16 bit 143 MHz BGA-60 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16100H
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 143Mhz,RoHS 14På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 16 Mbit 16 bit 143 MHz BGA-60 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H
ISSI DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V 211På lager
348Förväntad 2026-04-21
Min.: 1
Multipla: 1
Max.: 16

SDRAM 256 Mbit 16 bit 166 MHz BGA-54 16 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160G Tray
ISSI DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 ball BGA (8mmx13mm), RoHS 437På lager
Min.: 1
Multipla: 1
Max.: 7

SDRAM 512 Mbit 16 bit 143 MHz BGA-54 32 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S16320F
ISSI DRAM 256M 16Mx16 143MHz SDR SDRAM, 3.3V 2 798På lager
Min.: 1
Multipla: 1

SDRAM 256 Mbit 16 bit 143 MHz TSOP-II-54 16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 143MHz, 54 pin TSOP II (400 mil) RoHS 48På lager
108Förväntad 2026-04-28
Min.: 1
Multipla: 1
Max.: 18

SDRAM 256 Mbit 8 bit 143 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S83200J
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS 52På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 16 Mbit 16 bit 166 MHz TSOP-II-50 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16100H
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, 17På lager
240Förväntad 2026-05-06
Min.: 1
Multipla: 1
Max.: 200

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS 85På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 256 Mbit 8 bit 166 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V 0 C + 70 C IS42S83200J
ISSI DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS, IT 109På lager
Min.: 1
Multipla: 1
Max.: 5

SDRAM 256 Mbit 8 bit 166 MHz TSOP-II-54 32 M x 8 5.4 ns 3 V 3.6 V - 40 C + 85 C IS42S83200J
ISSI DRAM 256M 16Mx16 143Mhz SDR SDRAM, 3.3V 207På lager
348Förväntad 2026-04-21
Min.: 1
Multipla: 1
Max.: 91

SDRAM 256 Mbit 16 bit 143 MHz BGA-54 16 M x 16 5.5 ns 3 V 3.6 V 0 C + 70 C IS42S16160G Tray
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) 237På lager
Min.: 1
Multipla: 1
Max.: 200

SDRAM 256 Mbit 32 bit 166 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V 0 C + 70 C IS42S32800G Tray
ISSI DRAM 16M, 3.3V, SDRAM 1Mx16, 166Mhz,RoHS 106På lager
Min.: 1
Multipla: 1
Max.: 15

SDRAM 16 Mbit 16 bit 166 MHz BGA-60 1 M x 16 3 V 3.6 V - 40 C + 85 C IS42S16100H