CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
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Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 34 mohm G2
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959På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 40 mohm G2
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967På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 53 mohm G2
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858På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 78 mohm G2
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556På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1 054På lager
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Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1 189På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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3 648På lager
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Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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433På lager
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Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 87 A 21.6 mOhms - 7 V, + 20 V 5.1 V 71 nC - 55 C + 175 C 385 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
1 900På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 75 A 25.4 mOhms - 7 V, + 20 V 5.1 V 60 nC - 55 C + 175 C 335 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
475På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 52 A 39.6 mOhms - 7 V, + 20 V 5.1 V 8.1 nC - 55 C + 175 C 250 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
1 651På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 29 A 78.1 mOhms - 7 V, + 20 V 5.1 V 20.6 nC - 55 C + 175 C 158 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
752På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 21.2 A 115.7 mOhms - 7 V, + 20 V 5.1 V 14.4 nC - 55 C + 175 C 123 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
256På lager
1 000Förväntad 2026-03-05
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Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 14.9 A 181.4 mOhms - 7 V, + 20 V 5.1 V 9.7 nC - 55 C + 175 C 94 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
259På lager
5 000På beställningen
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 8.1 A 233.9 mOhms - 7 V, + 20 V 5.1 V 7.9 nC - 55 C + 175 C 80 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
9På lager
2 000Förväntad 2026-06-11
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Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 41 A 52.6 mOhms - 7 V, + 20 V 5.1 V 30 nC - 55 C + 175 C 205 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 22 mohm G2
Datablad
13På lager
1 680På beställningen
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datablad
750Förväntad 2026-03-05
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 1.2 kV 342 A 13.6 mOhms - 10 V, + 25 V 5.1 V 261 nC - 55 C + 175 C 1.364 kW Enhancement CoolSiC