CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
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Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
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Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 403 A 10.4 mOhms - 10 V, 25 V 5.1 V 348 nC - 55 C + 175 C 1.5 kW Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
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833På lager
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CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
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578På lager
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Papprulle: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
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492På lager
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Papprulle: 750

CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
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492På lager
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CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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1 988På lager
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SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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649På lager
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Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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482På lager
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Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 56 A 104 mOhms - 10 V, + 25 V 5.1 V 42.4 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datablad
405På lager
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Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datablad
570På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
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666På lager
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Multipla: 1
Papprulle: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datablad
682På lager
Min.: 1
Multipla: 1
Papprulle: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datablad
404På lager
Min.: 1
Multipla: 1
Papprulle: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
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150På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
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190På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 97 A 23 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
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230På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 69 A 34 mOhms - 10 V, + 25 V 5.1 V 60 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
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150På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
Datablad
188På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 55 A 45 mOhms - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
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161På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
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237På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 38 A 69 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
Datablad
198På lager
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Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 28 A 103 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 12 mohm G2
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664På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 17 mohm G2
Datablad
706På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 26 mohm G2
Datablad
683På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC