Resultat: 53
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 630På lager
10 000På beställningen
Min.: 1
Multipla: 1
: 2 000

SMD/SMT TO-263-7 N-Channel 1 Channel 20 mOhms Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 869På lager
Min.: 1
Multipla: 1
: 2 000

TOLL-8 650 V 75 mOhms
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 813På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 780På lager
Min.: 1
Multipla: 1
: 1 800

SMD/SMT HDSOP-16 N-Channel 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 643På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT LHSOF-4 N-Channel 1 Channel 650 V 30 A 95 mOhms 5.6 V 14.9 nC - 55 C + 175 C 141 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 218På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 1 612På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 168 A 13.1 mOhms - 7V, + 23 V 4.5 V 113 nC - 55 C + 175 C 681 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 2 918På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 68 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V, 33 mohm G2 6 319På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 53 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 194 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 256På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT N-Channel 1 Channel 650 V 158 A 13.1 mOhms - 7 V, + 23 V 5.6 V 112 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 950På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT N-Channel 1 Channel 650 V 68 A 33 mOhms - 7 V, + 23 V 5.6 V 42 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 280På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT N-Channel 1 Channel 650 V 58 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 259På lager
750Förväntad 2026-05-28
Min.: 1
Multipla: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 94 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 499 W Enhancement
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 558På lager
Min.: 1
Multipla: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 97 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 394 W Enhancement
Infineon Technologies SiC-MOSFET:ar Leverages switching performance while enabling the benefits of top-side cooling
796På beställningen
Min.: 1
Multipla: 1
: 1 800

SMD/SMT N-Channel 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar Leverages switching performance while enabling the benefits of top-side cooling 1 664På lager
Min.: 1
Multipla: 1
: 1 800

SMD/SMT N-Channel 1 Channel 650 V 68 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 1 900På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 1 912På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 48.1 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 237 W Enhancement
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 1 349På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 41.4 A 73 mOhms - 7 V, + 23 V 5.6 V 19 nC - 55 C + 175 C 208 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 750 V G2 1 970På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT PG-LHSOF-4 N-Channel 650 V 79 A 33 mOhms - 7 V to + 23 V 5.6 V 42 nC - 55 C + 175 C 357 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V G2 1 716På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT PG-LHSOF-4 N-Channel 650 V 68 A 41 mOhms - 7 V to + 23 V 5.6 V 34 nC - 55 C + 175 C 315 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V, 10 mohm G2 276På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 446På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT N-Channel 1 Channel 650 V 34.9 A 73 mOhms - 7 V, + 23 V 5.6 V 18 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 11På lager
2 250På beställningen
Min.: 1
Multipla: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 154 A 13.1 mOhms - 7 V, + 23 V 5.6 V 113 nC - 55 C + 175 C 651 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 650 V, 26 mohm G2 120På lager
480Förväntad 2026-06-11
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC