STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Konfiguration
If - Framström
Vrrm - Repetativ backspänning
Vf - Framspänning
Ifsm - Stötström framåt
Ir - Motström
Minsta drifttemperatur
Maximal drifttemperatur
Kvalificering
Förpackning
STMicroelectronics SiC-schottkydioder 650 V, 4A power Schottky High Surge silicon carbide diode
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2 480På lager
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SMD/SMT SMBF-2 Single 10 A 650 V 1.3 V 30 A 4 uA - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics SiC-schottkydioder Automotive 650 V, 4A power Schottky High Surge silicon carbide diode
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5 000Förväntad 2026-03-12
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Min.: 1
Multipla: 1
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SMD/SMT SMBF-2 Single 10 A 650 V 1.3 V 30 A 4 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel