Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 40 mOhm TO-268
Datablad
44På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 64 A 50 mOhms - 10 V, + 23 V 1.8 V 137 nC - 55 C + 175 C 303 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 35 mOhm TO-268
Datablad
98På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 65 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 206 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 15 mOhm TO-268
Datablad
91På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 477 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 60 mOhm TO-268
Datablad
104På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 37 A 69 mOhms - 10 V, + 23 V 1.9 V 56 nC - 55 C + 175 C 130 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-268
Datablad
23På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 89 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 80 mOhm TO-268
Datablad
58På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 35 A 100 mOhms - 10 V, + 23 V 1.8 V 64 nC - 55 C + 175 C 182 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 90 mOhm TO-268
Datablad
Ledtid 4 Veckor
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 25 A 111 mOhms - 10 V, + 23 V 1.9 V 38 nC - 55 C + 175 C 91 W Enhancement