Vishay Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Features
- -55°C to +150°C operating temperature range
- SMD mounting
- 1 to 3 channels
- N-channel, N-channel and P-channel transistor types
- 20V to 200V drain-source breakdown voltage
- -16V to 20V gate-source voltage
- 2.15mΩ to 26mΩ Rds on drain-source resistance
- 8.5A to 60A continuous drain current
- 12us to 510ns fall time
- 3.5µs to 330ns rise time
- 1.5W to 69.4W Pd power dissipation
- Enhancement mode
- AEC-Q101 qualified
Associated Products
Vishay Integrated MOSFET Solutions
Single- and multi-die MOSFETs with integrated features, such as Schottky diodes and ESD protection
Vishay PowerPAIR® Dual-MOSFETs
Co-packaged MOSFETs designed to reduce space and increase performance over separate discretes.
View Results ( 6 ) Page
| Artikelnummer | Datablad | Rds på - Dräneringskällans resistans | Pd - Effektavledning | Vds - Dräneringskällans genombrottsspänning | Id - Kontinuerlig dräneringsström |
|---|---|---|---|---|---|
| SISF00DN-T1-GE3 |  |
4.2 mOhms | 69.4 W | 30 V | 60 A |
| SISF20DN-T1-GE3 | |
13 mOhms | 69.4 W | 60 V | 20 A |
| SISF04DN-T1-GE3 | |
4 mOhms | 69.4 W | 30 V | 108 A |
| SISF02DN-T1-GE3 | |
2.15 mOhms | 52 W | 30 V | 40 A |
| SI8902AEDB-T2-E1 | |
28 mOhms | 5.7 W | 24 V | 11 A |
| SQUN702E-T1_GE3 | |
9.2 mOhms, 30 mOhms, 60 mOhms | 48 W, 60 W | 40 V, 200 V | 20 A, 30 A |
Publicerad: 2019-05-14
| Uppdaterad: 2024-10-24