200 MHz DRAM

Resultat: 125
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Typ Minnesstorlek Databussbredd Maximal klockfrekvens Paket/låda Organisation Åtkomsttid Minimal matningsspänning Maximal matningsspänning Minsta drifttemperatur Maximal drifttemperatur Serie Förpackning
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 779På lager
480Förväntad 2027-01-18
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 910På lager
4 800Förväntad 2027-01-06
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit 200 MHz BGA-24 32 M x 8 6.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray

AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 4 842På lager
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 128 Mbit 8 bit 200 MHz BGA-24 16 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 548På lager
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz BGA-24 8 M x 8 5.5 ns 1.62 V 1.98 V - 40 C + 85 C Tray
Infineon Technologies DRAM SPCM 1 522På lager
Min.: 1
Multipla: 1

HyperRAM 64 Mbit 8 bit 200 MHz FBGA-24 8 M x 8 35 ns 1.7 V 2 V - 40 C + 105 C Tray
AP Memory DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC) 842På lager
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 512 Mbit 8 bit 200 MHz BGA-24 64 M x 8 1.62 V 1.98 V - 40 C + 85 C Tray
Infineon Technologies S70KS1282GABHB020
Infineon Technologies DRAM SPCM 621På lager
Min.: 1
Multipla: 1

HyperRAM 128 Mbit 8 bit 200 MHz 16 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 369På lager
Min.: 1
Multipla: 1

SDRAM 64 Mbit 200 MHz TFBGA-24 2.7 V 3.6 V
Winbond DRAM 512Mb LPDDR, x16, 200MHz, Industrial Temp, 46nm
308På lager
Min.: 1
Multipla: 1

SDRAM Mobile - LPDDR 512 Mbit 16 bit 200 MHz VFBGA-60 32 M x 16 6.5 ns 1.7 V 1.95 V - 40 C + 85 C W949D6DB Tray
Alliance Memory DRAM DDR1, 256Mb, 16M x 16, 2.5V, BGA, 200 MHz, Industrial Temp - Tray 200På lager
Min.: 1
Multipla: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TFBGA-60 16 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C16M16D1 Tray
ISSI DRAM 512M 64Mx8 200MHz DDR 2.5V 34På lager
Min.: 1
Multipla: 1

SDRAM - DDR 512 Mbit 8 bit 200 MHz TSOP-II-66 64 M x 8 700 ps 2.3 V 2.7 V - 40 C + 85 C IS43R86400F
Winbond DRAM 512Mb LPDDR, x32, 200MHz
73På lager
Min.: 1
Multipla: 1

SDRAM Mobile - LPDDR 512 Mbit 32 bit 200 MHz VFBGA-90 16 M x 32 6.5 ns 1.7 V 1.95 V - 25 C + 85 C W949D2DB Tray
ISSI DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz 136På lager
Min.: 1
Multipla: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C IS43R16160F
Alliance Memory DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die 108På lager
Min.: 1
Multipla: 1

SDRAM - DDR 128 Mbit 16 bit 200 MHz TSOP-II-66 8 M x 16 700 ps 2.3 V 2.7 V - 40 C + 85 C AS4C8M16D1A Tray
Alliance Memory DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A) 189På lager
Min.: 1
Multipla: 1

SDRAM - DDR 64 Mbit 16 bit 200 MHz TSOP-II-66 4 M x 16 700 ps 2.3 V 2.7 V 0 C + 70 C AS4C4M16D1A Tray
Alliance Memory DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray 101På lager
Min.: 1
Multipla: 1

SDRAM - DDR 512 Mbit 16 bit 200 MHz FBGA-60 32 M x 16 700 ps 2.3 V 2.7 V - 40 C + 105 C AS4C32M16D1 Tray
Alliance Memory DRAM DDR1, 64MB, 2M X 32, 2.5V 144 BGA 200MHZ, COMMERCIAL TEMP - Tray 159På lager
Min.: 1
Multipla: 1

SDRAM - DDR 64 Mbit 32 bit 200 MHz FBGA-144 2 M x 32 700 ps 2.3 V 2.7 V 0 C + 70 C Tray
AP Memory DRAM 256Mb 200MHz 18V ITemp Suggested Alt APS256XXN-OB9-BG same device higher speed 8 912På lager
9 600Förväntad 2026-12-21
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz BGA-24 32 M x 8/16 M x 16 6.5 ns 1.62 V 1.98 V - 40 C + 85 C IoT RAM Tray
AP Memory DRAM IoT RAM 256Mb OPI x8,x16 DDR 200MHz, 1.8V Temp BGA24 suggested alt APS256XXN-OB9X-BG same device higher speed 3 233På lager
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 256 Mbit 8 bit / 16 bit 200 MHz BGA-24 32 M x 8/16 M x 16 1.62 V 1.98 V - 40 C + 105 C Tray
Infineon Technologies S70KL1282GABHV020
Infineon Technologies DRAM SPCM 3 376På lager
Min.: 1
Multipla: 1

HyperRAM 128 Mbit 8 bit 200 MHz 16 M x 8 35 ns 2.7 V 3.6 V - 40 C + 105 C Tray
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885På lager
Min.: 1
Multipla: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 5 ns 1.7 V 1.95 V - 40 C + 85 C
Infineon Technologies DRAM SPCM 454På lager
3 380På beställningen
Min.: 1
Multipla: 1

HyperRAM 64 Mbit 8 bit 200 MHz FBGA-24 8 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies DRAM SPCM 235På lager
Min.: 1
Multipla: 1

HyperRAM 512 Mbit 8 bit 200 MHz FBGA-24 64 M x 8 35 ns 1.7 V 2 V - 40 C + 105 C Tray
Infineon Technologies DRAM SPCM 351På lager
Min.: 1
Multipla: 1

HyperRAM 256 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 85 C Tray
Infineon Technologies DRAM SPCM 372På lager
Min.: 1
Multipla: 1

HyperRAM 512 Mbit 200 MHz FBGA-24 35 ns 1.7 V 2 V - 40 C + 85 C Tray