S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.