SRAM for Data Acquisition

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SRAM for Data Acquisition

SRAM stands for static random-access memory, a kind of memory chip that uses flip-flop type latching circuitry to store by the bit. SRAM can use very little power when sitting idle for long periods, and thus is better suited for certain applications over other types of memory. Learn More

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Description Datasheet Availability Pricing (SEK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Memory Size
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Maximum Clock Frequency
Interface Type
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
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Packaging

Microchip Technology SRAM 256K 32K X 8 1.7V SERIAL SRAM IND
Datasheet
184Expected 2026-08-31
Min.: 1
Mult.: 1

256 kbit 32 k x 8 32 ns 20 MHz SPI 1.95 V 1.7 V 10 mA - 40 C + 85 C SMD/SMT TSSOP-8 Tube
ISSI IS61WV204816BLL-10TLI
ISSI SRAM 32Mb High-Speed Async 2Mbx16 10ns
Datasheet
3 840On Order
Min.: 1
Mult.: 1

32 Mbit 2 M x 16 10 ns Parallel 3.6 V 2.4 V 90 mA - 40 C + 85 C SMD/SMT TSOP-48

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
Datasheet
1 930On Order
Min.: 1
Mult.: 1
: 1 000

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 2.4 V 35 mA - 40 C + 85 C SMD/SMT TSOP-44 Reel, Cut Tape

ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
Datasheet
1 755Expected 2026-10-16
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 2.4 V 35 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
Datasheet
1 918Expected 2026-10-16
Min.: 1
Mult.: 1

4 Mbit 512 k x 8 10 ns Parallel 3.6 V 2.4 V 45 mA - 40 C + 85 C SMD/SMT BGA-36 Tray
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp
Datasheet
471Expected 2026-08-25
Min.: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns Parallel 3.6 V 2.7 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Tray

ISSI SRAM 2Mb 128Kx16 55ns Async SRAM
Datasheet
395Expected 2026-08-24
Min.: 1
Mult.: 1

2 Mbit 128 k x 16 55 ns Parallel 3.6 V 2.5 V 3 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray

ISSI SRAM 16M (1Mx16) 25ns Async SRAM
Datasheet
384Expected 2026-10-05
Min.: 1
Mult.: 1

16 Mbit 1 M x 16 25 ns Parallel 3.6 V 2.4 V 30 mA - 40 C + 85 C SMD/SMT TSOP-48 Tray

ISSI SRAM 1M (128Kx8) 10ns Async SRAM 3.3v
Datasheet
963Expected 2026-10-16
Min.: 1
Mult.: 1

1 Mbit 128 k x 8 10 ns Parallel 3.6 V 2.4 V 55 mA - 40 C + 85 C SMD/SMT TSOP-32 Tray
ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS
Datasheet
551Expected 2027-01-20
Min.: 1
Mult.: 1

8 Mbit 512 k x 16 70 ns Parallel 3.6 V 2.5 V 28 mA - 40 C + 85 C SMD/SMT TFBGA-48
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Datasheet
480Expected 2026-08-18
Min.: 1
Mult.: 1

32 Mbit 2 M x 16 70 ns Parallel 3.6 V 2.7 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48
ISSI SRAM 18Mb 512Kx36 200Mhz Sync SRAM 3.3v
Datasheet
144Expected 2026-09-09
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 475 mA - 40 C + 85 C SMD/SMT FBGA-165 Tray
ISSI IS62C5128EL-45TLI
ISSI SRAM 4Mb,Low Power,Async,512K x 8,45ns,5v,32 Pin TSOP II, RoHS
Datasheet
351Expected 2026-08-20
Min.: 1
Mult.: 1

4 Mbit 512 k x 8 45 ns Parallel 5.5 V 4.5 V 22 mA - 40 C + 85 C SMD/SMT TSOP-II-32
ISSI SRAM 1Mb 128Kx8 45MHz Serial SRAM IT
Datasheet
100Expected 2026-08-28
Min.: 1
Mult.: 1

1 Mbit 128 k x 8 15 ns 45 MHz SDI, SPI, SQI 3.6 V 2.7 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Tray

ISSI SRAM 16Mb 10ns 1Mbx16 Async SRAM 2.4V-3.6V
Datasheet
1Expected 2026-10-14
Min.: 1
Mult.: 1

16 Mbit 1 M x 16 10 ns Parallel 3.6 V 2.4 V 95 mA - 40 C + 85 C SMD/SMT TSOP-48 Tray
ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
Datasheet
956On Order
Min.: 1
Mult.: 1

64 Mbit 4 M x 16 70 ns Parallel 1.95 V 1.7 V 30 mA - 40 C + 85 C SMD/SMT Tray

ISSI SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v-3.6v,44 Pin TSOP II, RoHS
Datasheet
270Expected 2026-11-16
Min.: 1
Mult.: 1

8 Mbit 512 k x 16 45 ns Parallel 3.6 V 2.2 V 25 mA - 40 C + 85 C SMD/SMT TSOP-II-44
ISSI SRAM 1Mb (128Kx8) 10ns Async SRAM 3.3v
Datasheet
213Expected 2026-10-16
Min.: 1
Mult.: 1

1 Mbit 128 k x 8 10 ns Parallel 3.6 V 2.4 V 55 mA - 40 C + 85 C SMD/SMT Tray
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI EXT
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 25 ns 20 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 85 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 25 ns 20 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Tube
Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM Vbat
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 1
Mult.: 1
: 3 300

512 kbit 64 k x 8 25 ns 20 MHz SDI, SPI 5.5 V 2.5 V 10 mA - 40 C + 85 C SMD/SMT SOIC-8 Reel, Cut Tape

Microchip Technology SRAM 256K 32K X 8 1.7V SERIAL SRAM IND
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 1
Mult.: 1

256 kbit 32 k x 8 32 ns 20 MHz SPI 1.95 V 1.7 V 10 mA - 40 C + 85 C Through Hole PDIP-8 Tube
Microchip Technology SRAM 512K 1.8V SPI SERIAL SRAM SQI EXT
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 2.2 V 1.7 V 10 mA - 40 C + 125 C SMD/SMT TSSOP-8 Tube
Microchip Technology SRAM 512K 2.5V SPI SERIAL SRAM SQI EXT
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

512 kbit 64 k x 8 32 ns 16 MHz SDI, SPI, SQI 5.5 V 2.5 V 10 mA - 40 C + 125 C SMD/SMT SOIC-8 Tube