CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (SEK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 4 511In Stock
Cut Tape
37,69 kr
19,13 kr
17,33 kr
14,18 kr
13,61 kr
Reel
12,04 kr
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 815In Stock
Cut Tape
27,79 kr
13,73 kr
12,38 kr
9,97 kr
Reel
7,91 kr
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 699In Stock
Cut Tape
24,19 kr
11,81 kr
10,06 kr
8,39 kr
Reel
6,59 kr
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 559In Stock
1 800Expected 2026-12-17
Cut Tape
103,50 kr
57,49 kr
54,56 kr
46,35 kr
Reel
46,35 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 798In Stock
1 800Expected 2026-11-19
Cut Tape
76,50 kr
45,11 kr
41,40 kr
40,39 kr
34,54 kr
Reel
34,54 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 183In Stock
Cut Tape
48,26 kr
28,24 kr
23,63 kr
19,80 kr
18,34 kr
Reel
15,53 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 556In Stock
800Expected 2026-11-19
Cut Tape
129,83 kr
86,51 kr
80,10 kr
69,41 kr
Reel
60,53 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 457In Stock
800Expected 2026-11-30
Cut Tape
106,76 kr
59,40 kr
56,70 kr
48,15 kr
Reel
48,15 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 228In Stock
Cut Tape
85,39 kr
46,58 kr
41,74 kr
Reel
36,90 kr
36,00 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
71,33 kr
38,25 kr
34,99 kr
28,24 kr
Reel
28,24 kr
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
23 319On Order
Cut Tape
123,41 kr
69,75 kr
68,74 kr
58,39 kr
Reel
58,39 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES
5 400On Order
Cut Tape
70,76 kr
39,15 kr
35,89 kr
33,86 kr
27,23 kr
Reel
27,23 kr
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN