STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Resultat: 3
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Konfiguration
If - Framström
Vrrm - Repetativ backspänning
Vf - Framspänning
Ifsm - Stötström framåt
Ir - Motström
Minsta drifttemperatur
Maximal drifttemperatur
Kvalificering
Förpackning
STMicroelectronics SiC-schottkydioder Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datablad
561På lager
77,92 kr
60,88 kr
35,39 kr
Min.: 1
Multipla: 1
Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C AEC-Q101 Tube
STMicroelectronics SiC-schottkydioder Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datablad
1 725På lager
Klipp band
97,04 kr
68,58 kr
61,54 kr
Papprulle
61,54 kr
61,43 kr
47,59 kr
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 600
SMD/SMT HU3PAK-9 Single 20 A 1.2 kV 1.35 V 1.1 kA 10 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics SiC-schottkydioder 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
Datablad
450På lager
65,94 kr
50,33 kr
31,54 kr
27,91 kr
Min.: 1
Multipla: 1
Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C Tube