1200V Trench XPT™ IGBTs with Sonic Diodes

Littelfuse 1200V Trench XPT™ Insulated-gate Bipolar Transistors (IGBTs) with Sonic Diodes are developed using XPT thin-wafer technology and Trench IGBT processes. The transistors feature reduced thermal resistance and are optimized for low switching loss. Littelfuse 1200V Trench XPT IGBTs with Sonic Diodes offer a high current handling capacity, high power density, and an anti-parallel sonic diode. These Trench XPT transistors are ideal for power inverter, motor drive, power factor correction (PFC) circuit, and battery charger applications.

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IXYS IGBTs IXYH55N120C4H1
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IGBT Transistors Si Through Hole TO-247-3
IXYS IGBTs IXYH30N120C4H1
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IGBT Transistors Si Through Hole TO-247-3
IXYS IGBTs IXYK85N120C4H1
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IGBT Transistors Si Through Hole TO-264-3
IXYS IGBTs IXYH40N120B4H1
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321På lager
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IGBT Transistors Si Through Hole TO-247-3
IXYS IGBTs IXYH40N120C4H1
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IGBT Transistors Si Through Hole TO-247-3
IXYS IGBTs IXYH55N120B4H1
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IGBT Transistors Si Through Hole TO-247-3
IXYS IGBT-moduler IXYN110N120B4H1
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IGBT Modules Si Screw Mount SOT-227B
IXYS IGBT-moduler IXYN110N120C4H1
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IGBT Modules Si Screw Mount SOT-227B
IXYS IGBT-moduler IXYN85N120C4H1
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107På lager
300Förväntad 2027-02-08
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IGBT Modules Si Screw Mount SOT-227B