1200V C4MS Discrete SiC MOSFETs

Wolfspeed 1200V C4MS Discrete Silicon Carbide (SiC) MOSFETs deliver unparalleled performance in hard-switched applications. The C4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, thereby expanding the usable design space for engineers to tune and optimize the performance in the application. The C4MS family provides improved Eon, ERR, and Eoff losses compared to the C3M family of devices, while maintaining a low RDS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of both hard-switched and soft-switched topologies.

Results: 16
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Description Datasheet Availability Pricing (SEK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Wolfspeed SiC MOSFETs SiC, MOSFET, 25mO, 1200V, TO-247-4 LP, Industrial
Datasheet
330Expected 2026-08-12
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 86 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 366 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,36mO,1200V, TO-263-7 XL T&R , Industrial
Datasheet
800Expected 2026-08-31
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 69 A 36 mOhms - 10 V, + 23 V 2.6 V 88 nC - 40 C + 175 C 340 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,25mO,1200V, TO-263-7 XL T&R , Industrial
Datasheet
800Expected 2026-11-23
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 94 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 429 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 25mO, 1200V, TO-247-4, Industrial
Datasheet
450Expected 2026-11-23
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 86 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 366 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,25mO,1200V, TSC (U2), Industrial
Datasheet
800On Order
Min.: 1
Mult.: 1
: 800
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 94 A 25 mOhms - 10 V, + 23 V 2.6 V 125 nC - 40 C + 175 C 455 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 36mO, 1200V, TO-247-4, Industrial
Datasheet
450Expected 2026-11-23
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 36 mOhms - 10 V, + 23 V 2.6 V 88 nC - 40 C + 175 C 272 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 36mO, 1200V, TO-247-4 LP, Industrial
Datasheet
450Expected 2026-11-23
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 36 mOhms - 10 V, + 23 V 2.6 V 88 nC - 40 C + 175 C 272 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,36mO,1200V, TSC (U2), Industrial
Datasheet
800On Order
Min.: 1
Mult.: 1
: 800
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 69 A 36 mOhms - 10 V + 23 V 2.6 V 88 nC - 40 C + 175 C 357 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,47mO,1200V, TO-263-7 XL T&R , Industrial
Datasheet
800Expected 2026-11-23
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 54 A 47 mOhms - 10 V + 23 V 2.6 V 68 nC - 40 C + 175 C 280 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 47mO, 1200V, TO-247-4, Industrial
Datasheet
450Expected 2026-11-23
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 50 A 47 mOhms - 10 V, + 23 V 2.6 V 68 nC - 40 C + 175 C 241 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 47mO, 1200V, TO-247-4 LP, Industrial
Datasheet
450Expected 2026-11-23
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 50 A 47 mOhms - 10 V, + 23 V 2.6 V 68 nC - 40 C + 175 C 241 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,47mO,1200V, TSC (U2), Industrial
Datasheet
800On Order
Min.: 1
Mult.: 1
: 800
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 54 A 47 mOhms - 10 V + 23 V 2.6 V 68 nC - 40 C + 175 C 283 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,65mO,1200V, TO-263-7 XL T&R , Industrial
Datasheet
800Expected 2026-11-23
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263-7XL N-Channel 1 Channel 1.2 kV 40 A 65 mOhms - 10 V + 23 V 2.6 V 51 nC - 40 C + 175 C 211 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET,65mO,1200V, TSC (U2), Industrial
Datasheet
800On Order
Min.: 1
Mult.: 1
: 800
SMD/SMT TSC (U2)-9 N-Channel 1 Channel 1.2 kV 42 A 65 mOhms - 10 V + 23 V 2.6 V 51 nC - 40 C + 175 C 215 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 65mO, 1200V, TO-247-4 LP, Industrial
Datasheet
330Expected 2026-08-12
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 39 A 65 mOhms - 10 V, + 23 V 2.6 V 51 nC - 40 C + 175 C 182 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 65mO, 1200V, TO-247-4, Industrial
Datasheet
450Expected 2026-11-23
Min.: 1
Mult.: 1
Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 39 A 65 mOhms - 10 V, + 23 V 2.6 V 51 nC - 40 C + 175 C 182 W Enhancement