CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
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Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
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7 866På lager
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Min.: 1
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: 2 000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 49 A 42 mOhms - 10 V 1.6 V 7.7 nC - 55 C + 150 C 167 W Enhancement CoolGaN
Infineon Technologies GaN FET Two 140 mohm / 650 V GaN transistors in half-bridge configuration
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2 970På lager
Min.: 1
Multipla: 1
: 3 000

SMD/SMT QFN-32 N-Channel 2 Channel 650 V 170 mOhms 1.6 V 1.8 nC - 55 C + 150 C GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
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1 559På lager
Min.: 1
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: 3 000

SMD/SMT HEMT 1 Channel 650 V 22 A 70 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 111 W Enhancement CoolGaN Si
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
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2 587På lager
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: 3 000

SMD/SMT HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.6 V 25 nC - 55 C + 150 C 81 W Enhancement CoolGaN Si
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
2 711På lager
Min.: 1
Multipla: 1
: 3 000

SMD/SMT HEMT 1 Channel 650 V 16 A 140 mOhms - 10 V 1.6 V 2.4 nC - 55 C + 150 C 59 W Enhancement CoolGaN Si
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
2 285På lager
Min.: 1
Multipla: 1
: 3 000

SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN Si
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
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2 133På lager
Min.: 1
Multipla: 1
: 3 000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 20 A 70 mOhms - 10 V 1.2 V 4.7 nC - 55 C + 150 C 91 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
2 679På lager
Min.: 1
Multipla: 1
: 3 000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.2 V 3.3 nC - 55 C + 150 C 68 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
2 537På lager
Min.: 1
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: 3 000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 20 A 140 mOhms - 10 V 1.2 V 2.4 nC - 55 C + 150 C 51 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
2 657På lager
Min.: 1
Multipla: 1
: 3 000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 12 A 170 mOhms - 10 V 1.2 V 1.8 nC - 55 C + 150 C 42 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
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1 956På lager
4 000På beställningen
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Min.: 1
Multipla: 1
: 2 000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 70 A 30 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 236 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
1 528På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 6 nC - 55 C + 150 C 131 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
1 519På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN GaN
Infineon Technologies GaN FET CoolGaN Transistor 650 V G5
Datablad
84På lager
2 000Förväntad 2026-09-10
Min.: 1
Multipla: 1
: 2 000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 31 A 66 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 106 W Enhancement CoolGaN GaN