SIHx5N80AE Power MOSFETs

Vishay / Siliconix SIHx5N80AE Power MOSFETs feature a low figure-of-merit, low effective capacitance, and reduced switching and conduction losses. The Vishay / Siliconix SIHx5N80AE Power MOSFETs provide an 850V drain-source voltage and are ideal for server and telecom power supplies. Additionally, the SIHx5N80AE MOSFETs utilize an ultra-low gate charge and integrated Zener diode ESD protection.

Results: 3
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Description Datasheet Availability Pricing (SEK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Vishay / Siliconix SIHU5N80AE-GE3
Vishay / Siliconix MOSFETs N-CHANNEL 100 V
Datasheet
2 884In Stock
Cut Tape
17,89 kr
8,53 kr
7,61 kr
6,00 kr
5,60 kr
Reel
5,23 kr
Min.: 1
Mult.: 1
: 3 000
Si Through Hole N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Reel, Cut Tape
Vishay / Siliconix SIHA5N80AE-GE3
Vishay / Siliconix MOSFETs TO220 800V 3A E SERIES
Datasheet
1 593In Stock
19,91 kr
9,57 kr
8,57 kr
6,80 kr
View
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 29 W Enhancement Tube
Vishay / Siliconix MOSFETs DPAK 800V 4.4A E SERIES
Datasheet
3 847In Stock
16,88 kr
7,98 kr
7,11 kr
5,60 kr
View
Min.: 1
Mult.: 1
Si SMD/SMT TO-252-4 N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Tube