1200V SiC MOSFETs

Nexperia 1200V SiC MOSFETs are housed in QDPAK (top-side cooled) packaging and are designed for automotive and industrial power conversion systems requiring high efficiency, high power density, and robust thermal performance. These devices combine SiC switching performance with a top-side cooled package architecture, providing a direct die-to-heatsink thermal path. This reduces dependence on PCB heat spreading and supports simpler, more effective cooling concepts in compact designs. Typical applications include EV onboard chargers, DC-DC converters, traction and auxiliary inverters, EV charging infrastructure, renewable energy systems, and high-power AC-DC/DC-DC conversion.

Resultat: 4
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge
Nexperia SiC-MOSFET:ar NSF040120L3A0/SOT429-2/TO247-3 202På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 66 A 60 mOhms - 10 V, + 22 V 2.9 V 84 nC - 55 C + 175 C 319 W Enhancement
Nexperia SiC-MOSFET:ar NSF080120L3A0/SOT429-2/TO247-3 230På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 120 mOhms - 10 V, + 22 V 2.9 V 44 nC - 55 C + 175 C 202 W Enhancement
Nexperia SiC-MOSFET:ar NSF040120L4A1/SOT8071/TO247-4L 20På lager
Min.: 1
Multipla: 1
: 30

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 53 A 60 mOhms - 10 V, + 22 V 2.9 V 81 nC - 55 C + 175 C 234 W Enhancement
Nexperia SiC-MOSFET:ar NSF017120T1A0/SOT8114/QDPAK
150Förväntad 2026-10-05
Min.: 1
Multipla: 1
: 800

SMD/SMT QDPAK-22 N-Channel 1 Channel 1.2 kV 111 A 26 mOhms - 10 V, + 22 V 2.9 V 196 nC - 55 C + 175 C 469 W Enhancement