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GCMS040B120S1-E1

Name: SemiQ GCMS040B120S1-E1
Brand: SemiQ
SKU: 148-GCMS040B120S1-E1
Price: 294.47 SEK
Availability: InStock

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Mouser No:

148-GCMS040B120S1-E1

Mfr. No:

GCMS040B120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V SiC COPACK Power Module

Datasheet:

GCMS040B120S1-E1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	57 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	242 W
Packaging:	Tube
Brand:	SemiQ
Fall Time:	16 ns
Product Type:	MOSFET Modules
Rise Time:	5 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Type:	COPACK Power Module
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	15 ns
Vf - Forward Voltage:	1.52 V

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Datasheet

GCMS040B120S1-E1 Datasheet (PDF)

Compliance Codes

TARIC:: 8541100000
CNHTS:: 8504409100
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.