UJ3C SiC FETs

onsemi UJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection. 

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO220-3
Datablad
1 525På lager
2 000Förväntad 2026-11-24
Min.: 1
Multipla: 1
Max.: 100

Through Hole TO-220-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO247
Datablad
720På lager
Min.: 1
Multipla: 1
Max.: 30

Through Hole TO-247-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO220-3
Datablad
365På lager
1 000Förväntad 2026-12-28
Min.: 1
Multipla: 1
Max.: 250

Through Hole TO-220-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO247
Datablad
532På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO263-3
Datablad
435På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 1200V/70MOSICFETG3TO24
Datablad
1 310På lager
Min.: 1
Multipla: 1
Max.: 40

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 34.5 A 90 mOhms - 12 V, + 12 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 1200V/40MOSICFETG3TO24
Datablad
392På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 1200V/80MOSICFETG3TO24
Datablad
635På lager
Min.: 1
Multipla: 1
Max.: 110

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 1200V/70MOSICFETG3TO24
Datablad
590På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34.5 A 90 mOhms - 25 V, + 25 V 6 V 46 nC - 55 C + 175 C 254.2 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 1200V/150MOSICFETG3TO2
Datablad
54På lager
600Förväntad 2026-10-16
Min.: 1
Multipla: 1
Max.: 20

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 18.4 A 180 mOhms - 25 V, + 25 V 3.5 V 30 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO263-3
Datablad
9På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 66 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 250 W Enhancement AEC-Q101 SiC FET