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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
344,10 kr
-
740In Stock
-
2 000On Order
|
Mouser Part No
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
740In Stock
2 000On Order
Stock:
740 Can Dispatch Immediately
On Order:
1 000 Expected 2026-09-17
1 000 Expected 2026-10-15
Factory Lead Time:
53 Weeks
|
|
|
344,10 kr
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|
255,96 kr
|
|
|
255,85 kr
|
|
|
242,44 kr
|
|
|
242,44 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
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TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
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- 55 C
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+ 175 C
|
800 W
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Enhancement
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|
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SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
154,30 kr
-
299In Stock
|
Mouser Part No
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
299In Stock
|
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|
154,30 kr
|
|
|
92,43 kr
|
|
|
92,32 kr
|
|
|
87,48 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
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|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
132,32 kr
-
1 621In Stock
|
Mouser Part No
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 621In Stock
|
|
|
132,32 kr
|
|
|
75,72 kr
|
|
|
70,56 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
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|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
86,05 kr
-
641In Stock
|
Mouser Part No
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
641In Stock
|
|
|
86,05 kr
|
|
|
47,04 kr
|
|
|
43,30 kr
|
|
|
40,22 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
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|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
49,78 kr
-
5 094In Stock
|
Mouser Part No
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
5 094In Stock
|
|
|
49,78 kr
|
|
|
25,94 kr
|
|
|
23,52 kr
|
|
|
20,77 kr
|
|
|
20,66 kr
|
|
Min.: 1
Mult.: 1
Max.: 1 000
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
251,12 kr
-
28In Stock
-
2 000On Order
|
Mouser Part No
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
28In Stock
2 000On Order
Stock:
28 Can Dispatch Immediately
On Order:
1 000 Expected 2026-09-28
1 000 Expected 2027-02-18
Factory Lead Time:
52 Weeks
|
|
|
251,12 kr
|
|
|
188,04 kr
|
|
|
172,87 kr
|
|
|
167,71 kr
|
|
|
157,16 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
106,71 kr
-
200In Stock
-
1 000Expected 2026-12-10
|
Mouser Part No
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
200In Stock
1 000Expected 2026-12-10
|
|
|
106,71 kr
|
|
|
60,99 kr
|
|
|
54,84 kr
|
|
|
51,87 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
79,57 kr
-
41In Stock
-
2 000On Order
|
Mouser Part No
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
41In Stock
2 000On Order
|
|
|
79,57 kr
|
|
|
48,47 kr
|
|
|
41,21 kr
|
|
|
38,03 kr
|
|
|
33,96 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
55,06 kr
-
491In Stock
-
3 000On Order
|
Mouser Part No
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
491In Stock
3 000On Order
Stock:
491 Can Dispatch Immediately
On Order:
1 000 Expected 2026-09-25
Factory Lead Time:
52 Weeks
|
|
|
55,06 kr
|
|
|
28,90 kr
|
|
|
26,38 kr
|
|
|
23,85 kr
|
|
|
22,53 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
183,53 kr
-
1 000Expected 2027-04-22
|
Mouser Part No
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 000Expected 2027-04-22
|
|
|
183,53 kr
|
|
|
115,50 kr
|
|
|
114,63 kr
|
|
|
107,92 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
64,51 kr
-
2 000On Order
|
Mouser Part No
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2 000On Order
|
|
|
64,51 kr
|
|
|
34,29 kr
|
|
|
31,43 kr
|
|
|
29,34 kr
|
|
|
27,48 kr
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|