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SiC MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
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1:
204,69 kr
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736In Stock
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NRND
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Mouser Part No
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
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SiC MOSFETs SIC_DISCRETE
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736In Stock
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204,69 kr
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164,41 kr
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151,47 kr
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137,59 kr
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Quote
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Quote
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
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1:
53,53 kr
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1 930In Stock
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9 000On Order
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Mouser Part No
726-IMBF170R1K0M1XTM
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Infineon Technologies
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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1 930In Stock
9 000On Order
Stock:
1 930 Can Dispatch Immediately
On Order:
5 000 Pending
4 000 Expected 2027-01-07
Factory Lead Time:
53 Weeks
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53,53 kr
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33,71 kr
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25,23 kr
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21,52 kr
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20,03 kr
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19,19 kr
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Min.: 1
Mult.: 1
:
1 000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
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5.2 A
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1 Ohms
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- 10 V, + 20 V
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4.5 V
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5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
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1:
74,31 kr
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305In Stock
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NRND
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Mouser Part No
726-IMW120R140M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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305In Stock
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74,31 kr
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48,55 kr
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39,86 kr
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34,87 kr
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32,97 kr
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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19 A
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182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
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1:
147,87 kr
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1 224In Stock
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NRND
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Mouser Part No
726-IMW65R027M1HXKSA
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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1 224In Stock
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147,87 kr
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112,68 kr
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93,92 kr
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83,63 kr
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79,08 kr
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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650 V
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47 A
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34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
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189 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
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1:
101,44 kr
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42In Stock
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240Expected 2026-08-24
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NRND
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Mouser Part No
726-IMZA65R048M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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42In Stock
240Expected 2026-08-24
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101,44 kr
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71,76 kr
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59,78 kr
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53,11 kr
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50,46 kr
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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650 V
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39 A
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64 mOhms
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- 5 V, + 23 V
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5.7 V
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33 nC
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- 55 C
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+ 150 C
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125 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
167,90 kr
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2 160On Order
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NRND
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Mouser Part No
726-IMZ120R030M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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2 160On Order
Factory Lead Time:
45 Weeks
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167,90 kr
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110,98 kr
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95,93 kr
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93,28 kr
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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1.2 kV
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56 A
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40 mOhms
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- 7 V, + 23 V
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5.7 V
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63 nC
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- 55 C
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+ 150 C
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227 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
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1:
86,50 kr
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Non-Stocked Lead-Time 52 Weeks
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NRND
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Mouser Part No
726-IMZA65R072M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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Non-Stocked Lead-Time 52 Weeks
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86,50 kr
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60,84 kr
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44,63 kr
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39,22 kr
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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650 V
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28 A
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94 mOhms
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- 5 V, + 23 V
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5.7 V
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22 nC
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- 55 C
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+ 150 C
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96 W
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Enhancement
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CoolSiC
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Sweden