π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Resultat: 11
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
Toshiba MOSFET:er TO252 900V 2A N-CH MOSFET 4 015På lager
Klipp band
17,03 kr
8,90 kr
6,90 kr
5,43 kr
Papprulle
5,03 kr
Min.: 1
Multipla: 1
: 2 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET:er PLN MOS 900V 1300m (VGS=10V) TO-220SIS 5På lager
550På beställningen
30,33 kr
14,84 kr
13,19 kr
11,21 kr
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ 3 085På lager
Klipp band
14,51 kr
6,80 kr
6,06 kr
4,75 kr
Papprulle
4,55 kr
Min.: 1
Multipla: 1
: 2 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET:er PLN MOS 900V 1300m (VGS=10V) TO-3PN 2 396På lager
37,04 kr
21,10 kr
16,70 kr
15,28 kr
11,21 kr
Min.: 1
Multipla: 1
Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET:er PLN MOS 800V 1000m (VGS=10V) TO-220SIS 153På lager
26,82 kr
13,19 kr
12,31 kr
Min.: 1
Multipla: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 800V 1000m (VGS=10V) TO-3PN 4På lager
125Förväntad 2026-11-23
36,27 kr
18,57 kr
16,49 kr
13,52 kr
Min.: 1
Multipla: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 250På lager
15,17 kr
7,19 kr
7,18 kr
5,62 kr
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 265På lager
15,50 kr
7,31 kr
7,30 kr
5,62 kr
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 800V 1700m (VGS=10V) TO-220SIS 158På lager
22,31 kr
10,87 kr
10,77 kr
9,45 kr
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 900V 2000m (VGS=10V) TO-220SIS 170På lager
20,77 kr
10,11 kr
10,02 kr
8,65 kr
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 900V 2000m (VGS=10V) TO-3PN 98På lager
31,54 kr
15,83 kr
13,96 kr
11,43 kr
Min.: 1
Multipla: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray