DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
20På lager
305,85 kr
206,06 kr
188,26 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
17På lager
305,85 kr
206,06 kr
190,90 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 3.6 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
20På lager
361,57 kr
249,36 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 2.5 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
31På lager
182,32 kr
109,68 kr
102,98 kr
Min.: 1
Multipla: 1
Through Hole To-247-3 1 Channel 1.2 kV 72.7 A 43 mOhms - 8 V, + 19 V 2.5 V 105 nC - 55 C + 175 C 341 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
78På lager
118,47 kr
67,15 kr
62,20 kr
60,45 kr
57,92 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 170 C 246 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
60På lager
146,17 kr
84,18 kr
78,25 kr
77,81 kr
75,61 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 175 C 246 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
88På lager
118,47 kr
67,15 kr
60,45 kr
54,18 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
60På lager
146,17 kr
84,18 kr
Min.: 1
Multipla: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
120Tillgänglig mängd i lager
Mer info finns
365,20 kr
238,92 kr
Min.: 1
Multipla: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
Datablad
100Tillgänglig mängd i lager
Mer info finns
97,26 kr
63,85 kr
53,96 kr
51,43 kr
Min.: 1
Multipla: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement