ROHM Semiconductor Automotive 40A & 80A Power MOSFETs
ROHM Semiconductor Automotive 40A and 80A Power MOSFETs are N-channel and P-channel devices. These AEC-Q101 qualified MOSFETs feature low on-resistance, ±80A/±160A pulsed drain current, and up to 142W power dissipation. The 40A and 80A power MOSFETs operate from -55°C to 175°C temperature range and are 100% avalanche tested. These power MOSFETs are ideal for ADAS, automotive, and lighting applications.
Features
- Low on-resistance
- ±80A/±160A pulsed drain current
- Up to 142W power dissipation
- -55°C to 175°C range temperature range
- 100% avalanche tested
- Pb-free plating
- RoHS compliant
Applications
- ADAS
- Automotive
- Lighting
Related MOSFETs
ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs
AEC-Q101 MOSFETs featuring low forward voltage, fast recovery time, and high surge capability.
View Results ( 5 ) Page
| Artikelnummer | Datablad | Falltid | Transkonduktans framåt - Min | Id - Kontinuerlig dräneringsström | Pd - Effektavledning | Qg - Gate-laddning | Rds på - Dräneringskällans resistans | Transistorns polaritet | Typisk fördröjningstid vid avstängning | Typisk fördröjningstid vid påslagning | Vds - Dräneringskällans genombrottsspänning | Vgs - Gate-källans spänning | Vgs th - Gate-källans tröskelspänning |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RD3E08BBJHRBTL |  |
180 ns | 20 S | 80 A | 142 W | 150 nC | 3.7 mOhms | P-Channel | 220 ns | 19 ns | 30 V | - 20 V, 5 V | 2.5 V |
| RD3G08DBKHRBTL | |
15 ns | 12.1 S | 80 A | 76 W | 28 nC | 4.1 mOhms | N-Channel | 56 ns | 18 ns | 40 V | 20 V | 2.5 V |
| RH7G04BBJFRATCB | |
97 ns | 14 S | 40 A | 75 W | 25 nC | 11.9 mOhms | P-Channel | 175 ns | 14 ns | 40 V | - 20 V, 5 V | 2.5 V |
| AG091FLD3HRBTL | |
11 ns | 12 S | 80 A | 76 W | 22 nC | 7.5 mOhms | N-Channel | 50 ns | 18 ns | 60 V | 20 V | 2.5 V |
| RD3L08DBKHRBTL | |
11 ns | 12 S | 80 A | 76 W | 22 nC | 7.5 mOhms | N-Channel | 50 ns | 18 ns | 60 V | 20 V | 2.5 V |
Publicerad: 2025-05-19
| Uppdaterad: 2025-10-09