Tillbaka till onsemi

onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules

onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules are 1200V, 80mΩ 3-phase bridge power modules housed in a Dual Inline Package (DIP). These SiC modules are compactly designed to have low total module resistance. The NVXK2VR80WxT2 power modules are automotive-qualified per AEC-Q101 and AQG324. These power modules are lead-free and ROHS, UL94V-0 compliant. The NVXK2VR80WxT2 SiC modules' temperature sensing and the lowest thermal resistance make them ideal for PFC onboard chargers in xEV applications.

Features

  • DIP Silicon Carbide (SiC) 3-phase bridge power module
  • 1200V drain to source voltage (VDSS)
  • 20A continuous drain current (ID) - (NVXK2VR80WDT2)
  • 31A continuous drain current (ID) - (NVXK2VR80WXT2)
  • 80mΩ (typical) drain to source on-resistance (RDS(ON))
  • -55°C to 175°C operating Junction temperature (TJ) range
  • Creepage and clearance per IEC60664−1 and IEC 60950−1
  • Compact design for low total module resistance
  • Module serialization for full traceability
  • Lead-free
  • RoHS and UL94V-0 compliant
  • Automotive qualified per AEC-Q101 and AQG324

Applications

  • PFC for on-board charger in xEV applications
  • 11kW to 22kW on-board charger for EV-PHEV

SiC MOSFET 3-Phase Bridge Module

onsemi NVXK2VR80WxT2 Silicon Carbide (SiC) Modules

Related Modules

onsemi NVXK2PR80WXT2 Silicon Carbide (SiC) Module

1200V, 80mΩ, and 31A full-bridge power module, housed in a Dual Inline Package (DIP).

Learn Moreom onsemi NVXK2PR80WXT2 Silicon Carbide (SiC) Module View Productsrelaterat till onsemi NVXK2PR80WXT2 Silicon Carbide (SiC) Module

onsemi NVXK2TR40WXT Silicon Carbide (SiC) Module

1200V, 40mΩ, and 27A dual half-bridge EliteSiC power module, housed in a Dual-Inline Package (DIP).

Learn Moreom onsemi NVXK2TR40WXT Silicon Carbide (SiC) Module View Productsrelaterat till onsemi NVXK2TR40WXT Silicon Carbide (SiC) Module

onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module

1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module, housed in a Dual-Inline Package (DIP).

Learn Moreom onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module View Productsrelaterat till onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module

onsemi NVXK2VR40WXT2 Silicon Carbide (SiC) Module

1200V, 40mΩ, and 55A 3-phase bridge power module, housed in a Dual Inline Package (DIP).

Learn Moreom onsemi NVXK2VR40WXT2 Silicon Carbide (SiC) Module View Productsrelaterat till onsemi NVXK2VR40WXT2 Silicon Carbide (SiC) Module
View Results ( 2 ) Page
Artikelnummer Datablad Id - Kontinuerlig dräneringsström Pd - Effektavledning Rds på - Dräneringskällans resistans Vds - Dräneringskällans genombrottsspänning Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Antal kanaler Stigtid Falltid Längd Bredd Höjd Paket/låda Förpackning RoHS - Mouser
NVXK2VR80WDT2 NVXK2VR80WDT2 Datablad 20 A 82 W 116 mOhms 1.2 kV - 15 V, + 25 V 4.3 V 6 Channel 12 ns 9 ns 44.2 mm 29 mm 5.8 mm APM-32 Tube Y
NVXK2VR80WXT2 NVXK2VR80WXT2 Datablad 31 A 208 W 116 mOhms 1.2 kV - 15 V, + 25 V 4.3 V 6 Channel 12 ns 9 ns 44.2 mm 29 mm 5.8 mm APM-32 Tube Y
Publicerad: 2024-08-06 | Uppdaterad: 2024-08-28