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onsemi NVMFS6H8x Power MOSFETs

onsemi NVMFS6H8x Power MOSFETs offer 80V, single N-channel, and a small footprint for a compact design. These power MOSFETs are available in 2.1mΩ, 2.8mΩ, 3.7mΩ, and 3.2mΩ RDS(on) resistance ranges. Features include low RDS(on) to minimize conduction losses, low QG, and low capacitance. The NVMFS6H8x power MOSFETs are RoHS compliant, PPAP capable, and AEC-Q101 qualified. These power MOSFETs operate at -55°C to 175°C operating temperature range.

Features

  • Small footprint for a compact design with 5mm x 6mm dimension
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Wettable Flank (WF) option for enhanced optical inspection
  • -55°C to 175°C operating temperature range
  • AEC-Q101 qualified and PPAP capable
  • These devices are Pb-free and are RoHS compliant

Applications

  • Automotive
  • DC-DC converters
  • Point-of-Load (POL)
  • Servers

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onsemi Trench8 MOSFETs

MOSFETs feature low RDS(ON), ultra-low Qg, and low Qg x RDS(ON), a key figure of merit (FOM).

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View Results ( 5 ) Page
Artikelnummer Datablad Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Qg - Gate-laddning Pd - Effektavledning
NVMFS6H864NLT1G NVMFS6H864NLT1G Datablad 22 A 29 mOhms 9 nC 33 W
NVMFS6H800NT1G NVMFS6H800NT1G Datablad 203 A 2.1 mOhms 85 nC 200 W
NVMFS6H801NT1G NVMFS6H801NT1G Datablad 157 A 2.8 mOhms 64 nC 166 W
NVMFS6H818NLT1G NVMFS6H818NLT1G Datablad 135 A 3.2 mOhms 64 nC 140 W
NVMFS6H818NT1G NVMFS6H818NT1G Datablad 123 A 3.7 mOhms 46 nC 136 W
Publicerad: 2018-06-11 | Uppdaterad: 2022-10-21