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onsemi NVMFS5C604N Single N-Channel Power MOSFET

onsemi NVMFS5C604N Single N-Channel Power MOSFET features a 288A continuous drain current, 1.2mΩ at 10V RDS(ON), and 60V drain-to-source voltage. The NVMFS5C604N is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

  • Small footprint (5mm x 6mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • NVMFS5C604NWF - wettable flank option for enhanced optical inspection
  • AEC-Q101-qualified and PPAP-capable
  • Pb-free and RoHS-compliant

Applications

  • Reverse battery protection
  • Switching power supplies
  • Power switches (high-side driver, low-side driver, H-bridges, etc)

Specifications

  • 288A maximum continuous drain current
  • 1.2mΩ at 10V RDS(ON) maximum
  • 60V Drain-to-Source voltage
  • ±20V Gate-to-Source voltage
  • 900A pulsed drain current
  • -55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFS5C604N Single N-Channel Power MOSFET

Associated Products

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AEC−Q101 Qualified MOSFETs offering compact and efficient solutions for automotive applications.

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onsemi N-Channel 40V & 60V Automotive Power MOSFETs

Available in 5mm x 6mm flat-lead and dual-cool packages ideal for compact and efficient designs.

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Publicerad: 2024-01-03 | Uppdaterad: 2025-11-11