onsemi 40V Power MOSFETs
onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.
Features
- Low RDS(on) to minimize conduction loss
- Low Qrr with soft recovery to minimize ERR loss and voltage spike
- Low Qg and capacitance to minimize driving and switching loss
- Pb-free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- High switching frequency DC-DC conversion
- Synchronous rectification
Block Diagram
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View Results ( 14 ) Page
| Artikelnummer | Datablad | Vds - Dräneringskällans genombrottsspänning | Id - Kontinuerlig dräneringsström | Rds på - Dräneringskällans resistans |
|---|---|---|---|---|
| NTMFS0D4N04XMT1G |  |
40 V | 509 A | 420 uOhms |
| NTMFS0D5N04XLT1G | |
40 V | 455 A | 490 uOhms |
| NTMFS0D6N04XMT1G | |
40 V | 380 A | 570 uOhms |
| NTMFS0D9N04XLT1G | |
40 V | 278 A | 900 uOhms |
| NTMFS1D1N04XMT1G | |
40 V | 233 A | 1.05 mOhms |
| NTMFS1D3N04XMT1G | |
40 V | 195 A | 1.3 mOhms |
| NTMFS2D3N04XMT1G | |
40 V | 111 A | 2.35 mOhms |
| NTMFS2D5N08XT1G | |
80 V | 181 A | 2.1 mOhms |
| NTMFS3D5N08XT1G | |
80 V | 135 A | 3 mOhms |
| NTMFS0D5N04XMT1G | |
40 V | 414 A | 520 uOhms |
Publicerad: 2024-01-16
| Uppdaterad: 2025-09-30