Vishay / Siliconix SiJA22DP N-Channel 25V MOSFET
Vishay / Siliconix SiJA22DP N-Channel 25V MOSFET comes in a PowerPAK SO-8L package with a single configuration design and 25VDS drain-source voltage. This module features TrenchFET® Gen IV power, tuned for the lowest RDS to Qoss FOM, and is 100% Rg and UIS tested. Vishay SiJA22DP N-Channel 25V MOSFET applications are synchronous rectification, high power density DC/DC, battery and load switches, and hot-swap switches.
Features
- TrenchFET Gen IV power
- Qgd/Qgs ratio <1 optimizes switching characteristics
- Tuned for the lowest RDS to Qoss FOM
- 100% Rg and UIS tested
Applications
- Synchronous rectification
- High power density DC/DC
- Hot-swap switches and OR-ing FET
- Battery and load switches
Specifications
- 25VDS drain-source voltage
- 160A pulsed drain current
- 125mJ single pulse avalanche energy
- 6500pF input capacitance
- 2250pF output capacitance
- 2Ω gate resistance
- PowerPAK SO-8L package
- Single configuration
- -55°C to +150°C operating temperature range
- 48W power dissipation
Dimensions
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Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Publicerad: 2020-11-19
| Uppdaterad: 2024-12-16