STMicroelectronics MDmesh™ DM2 Power MOSFETs
STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Features
- Low gate charge and input capacitance
- Lower RDS(on) x area vs the previous generation
- Low gate input resistance
- Designed for switching applications
- 100% avalanche tested
- Zener-protected
- High dv/dt and avalanche capabilities
Related Products
STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 MOSFETs
High-voltage with very low recovery charge (Qrr) and time (trr) combined with low RDS(on).
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The newest technologies in Power MOSFETs and IGBTs.
STMicroelectronics Power MOSFETs
Broad range of breakdown voltages from -500V to 1500V.
Development Tools
STMicroelectronics EVSTDRIVEG600DM Demonstration Board
Half-Bridge reference design pairing the STDRIVEG600 Gate Driver with an MDmesh DM2 Power MOSFET.
STMicroelectronics STEVAL-CTM012V1 Evaluation Board
Reference design for a three-phase inverter based on the STSPIN32F0601Q BLDC Controller.
Complete Your Design
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.