ROHM Semiconductor RV4E031RP HZG Small Signal MOSFET
ROHM Semiconductor RV4E031RP HZG Small Signal MOSFET features low on-resistance, a small high power package, and a low voltage drive. This MOSFET is 100% UIS tested and includes a Wettable Flank for Automated Optical-solder Inspection (AOI). The RV4E031RP HZG signal MOSFET operates at -55°C to 150°C junction temperature range and storage temperature range. This MOSFET offers -30V drain-source voltage, ±3.1A continuous drain current, and 1.5W power dissipation. Typical applications include switching circuits, high side load switch, and high-speed line driver.
Features
- Low on-resistance
- Small high power package
- -4V low voltage drive
- 100% UIS tested
- Wettable Flank for Automated Optical solder Inspection (AOI)
- 130μm guarantee electrode part
Specifications
- -55°C to 150°C junction temperature range
- -30V drain-source voltage
- ±3.1A continuous drain current
- 1.5W power dissipation
- ±12A pulsed drain current
Applications
- Switching circuits
- High side load switch
- High-speed line driver
Circuit Diagram
Publicerad: 2021-02-26
| Uppdaterad: 2022-03-11