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ROHM Semiconductor RJ1x10BBG Power MOSFETs

ROHM Semiconductor RJ1x10BBG Power MOSFETs are N-channel power MOSFETs featuring low on-resistance and a high power package. The RJ1G10BBG and RJ1L10BBG power MOSFETs have a drain-source voltage of 40V and 60V, a continuous drain current of ±280A and ±240A, respectively, and a power dissipation of 192W. The RJ1x10BBG power MOSFETs are RoHS compliant. These power MOSFETs feature lead-free plating, are halogen-free, and 100% Rg and UIS tested. The RJ1x10BBG power MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching, motor drives, and DC/DC converters.

Features

  • Low ON resistance
  • High power package (TO263AB)
  • Pb-free plating
  • RoHS compliant
  • Halogen free
  • 100% Rg and UIS tested

Specifications

  • Drain - source voltage:
    • 40VDSS (RJ1G10BBG)
    • 60VDSS (RJ1L10BBG)
  • RDS(ON) (maximum):
    • 1.43mΩ (RJ1G10BBG)
    • 1.85mΩ (RJ1L10BBG)
  • 0.65°C/W thermal resistance
  • ±900A pulsed drain current
  • 70A avalanche current
  • ±20V gate source voltage
  • -55°C to 150°C operating temperature range

Applications

  • Switching
  • Motor drives
  • DC/DC converter
View Results ( 2 ) Page
Artikelnummer Datablad Falltid Transkonduktans framåt - Min Id - Kontinuerlig dräneringsström Qg - Gate-laddning Rds på - Dräneringskällans resistans Stigtid Vds - Dräneringskällans genombrottsspänning Minsta drifttemperatur Maximal drifttemperatur
RJ1G10BBGTL1 RJ1G10BBGTL1 Datablad 340 ns 70 S 280 A 210 nC 1.43 mOhms 64 ns 40 V - 55 C + 150 C
RJ1L10BBGTL1 RJ1L10BBGTL1 Datablad 140 ns 64 S 240 A 160 nC 1.85 mOhms 31 ns 60 V - 55 C + 150 C
Publicerad: 2025-07-29 | Uppdaterad: 2025-08-21