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ROHM Semiconductor RF202LB2S Super Fast Recovery Diode

ROHM Semiconductor RF202LB2S Super Fast Recovery Diode is a silicon epitaxial planar type super-fast recovery diode featuring low VF and low switching loss. This diode also features a fast reverse recovery time of typically 14ns and a reverse voltage of 200V. The RF202LB2S diode is designed using silicon epitaxial planar type construction and comes in a DO-214AA (SMB) package. This diode offers 2A average rectified forward current and 40A peak forward surge current. The RF202LB2S super-fast recovery diode is RoHS compliant and operates within the -55°C to 150°C temperature range. This diode is ideal for use in general rectification applications.

Features

  • Small power mold type
  • 0.85V typical low forward voltage
  • Low switching loss
  • Silicon epitaxial planar structure
  • RoHS compliant
  • DO-214AA (SMB) package

Specifications

  • 200VRM repetitive peak reverse voltage
  • 200VR reverse voltage
  • 2A average rectified forward current
  • 40A peak forward surge current
  • -55°C to 150°C storage temperature range

Dimensional Diagram

Mechanical Drawing - ROHM Semiconductor RF202LB2S Super Fast Recovery Diode
Publicerad: 2025-07-29 | Uppdaterad: 2025-08-24