Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS) is a 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package. This BDS conducts current and blocks voltage in both directions, combining a high-voltage depletion-mode GaN with low-voltage normally-off silicon MOSFETs. The TP65B110HRU BDS is based on the SuperGaN® Gen 1 bidirectional platform. This BDS delivers superior performance, standard gate‑drive compatibility, easy integration, and robust reliability. The TP65B110HRU BDS offers breakthrough integration, resulting in reduced component count, lower cost, and a smaller footprint. This BDS enables ultra-fast switching, high efficiency, and higher power density, and is ideal for MHz-class operation and compact magnetics. Typical applications include solar inverters, AI infrastructure, automotive OBC, motor drives, and AC/DC and DC/DC single-stage power conversion architectures.
Features
- High noise immunity, easy to drive, and compatible with standard silicon drivers, with no negative voltage required
- Robust and reliable performance in high-speed soft-switching and hard-switching applications enabled by high dv/dt immunity
- Integrated freewheeling diode with the lowest reverse conduction loss, improving overall power conversion efficiency
- Enables single-stage AC/DC topologies, eliminating bulky electrolytic capacitors, reducing system size, weight, and cost
Applications
- Solar inverters
- AI infrastructure
- Automotive OBC
- Motor drives
- AC/DC and DC/DC single-stage power conversion architectures
Specifications
- 110mΩ Rss(on) typical on‑state resistance
- 3V Vgs,th gate threshold voltage
- ±12V Vgs,max maximum gate‑source voltage rating
- >100V/ns dv/dt immunity
- 1.8V VSS,R reverse conduction voltage
- ±800V transient rating
- 2kV HBM ESD
Example Application (Solar-Micro Inverter)
