RAMXEED MB85RS4MLY 4M (512K x 8) Bit SPI FRAM
RAMXEED MB85RS4MLY 4M (512K x 8) Bit SPI FRAM (Ferroelectric Random Access Memory) chip features a configuration of 524,288 words x 8-bits. The devices utilize the ferroelectric and silicon gate CMOS process technologies to form nonvolatile memory cells. The MB85RS4MLY employs a Serial Peripheral Interface (SPI) and is ideal for high-temperature environment applications.
The RAMXEED MB85RS4MLY 4M Bit SPI FRAM retains data without a backup battery, as SRAM requires. The memory cells in the MB85RS4MLY allow for 1013 read/write operations, significantly improving the number of read and write functions supported by Flash memory and EEPROM. Additionally, the MB85RS4MLY does not need any waiting time in the writing process. The write cycle time of MB85RS4MLY is much shorter than that of Flash memories or EEPROM.
Features
- 524,288 words x 8-bit configuration
- 256 words x 8-bit Special Sector region
- Unique ID
- 64-bit serial number
- 50MHz (maximum) operating frequency
- 10-years (+85°C), 2.75-years (+105°C), 0.85-years (+125°C) or more, under evaluation for more than 2.5-years (+125°C) data retention
- 101 times/byte high endurance
- 1.7V to 1.95V operating power supply voltage
- Operating power supply current of 3.5mA (maximum at 50MHz), standby current of 340µA (maximum) low power consumption
- Operation ambient temperature range from -40°C to +125°C
- 8-pin plastic SOP 208mil, 8-pin plastic DFN 5mm x 6mm, RoHS compliant package
Associated Products
RAMXEED FRAM (Ferroelectric Random Access Memory)
Non-volatile memory featuring high read/write endurance and low power consumption.
Block Diagram
System Configuration
Publicerad: 2023-08-17
| Uppdaterad: 2025-06-05