onsemi UF3N 1700V-400mW SiC Normally On JFET

onsemi UF3N 1700V-400mW SiC Normally On JFET exhibits ultra-low on-resistance (RDS(ON)) and gate charge (QG) that allows low conduction and switching loss. The low RDS(ON) value of this JFET at VGS = 0V is ideal for current protection circuits without the need for active control and for cascode operation. The UF3N offers a low gate charge and low intrinsic capacitance. This SiC FET from onsemi operates in a -55°C to +175°C temperature range and is available in a D2PAK-7L package that is RoHS compliant, halogen-free, and lead-free. Typical applications include overcurrent protection circuits, DC-AC inverters, switch-mode power supplies, power factor correction modules, motor drives, and induction heating.

Features

  • Voltage-controlled device
  • Extremely fast switching not dependent on temperature
  • Low gate charge
  • Low intrinsic capacitance
  • D2PAK-7L package
  • RoHS compliant
  • Halogen free and lead free

Applications

  • Overcurrent protection circuits
  • DC-AC inverters
  • Switch-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating

Specifications

  • -55°C to +175°C operating temperature range
  • 175°C maximum junction temperature
  • 1700V drain-source voltage
  • 68W power dissipation
  • +245°C reflow soldering temperature
Publicerad: 2021-10-29 | Uppdaterad: 2025-07-30