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onsemi SuperFET® V MOSFETs

onsemi SuperFET® V MOSFETs are the fifth generation high-voltage Super Junction (SJ) MOSFETs. These devices deliver best-in-class Figure of Merits (FoMs) (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600V SuperFET V MOSFETs provide design benefits through reduced conduction and switching losses while supporting extreme MOSFET dVDS/dt ratings at 120V/ns. The SuperFET V MOSFET FAST series help to maximize system efficiency and power density. The SuperFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. Typical applications include telecommunication, cloud system, and industrial.

Features

  • Low switching loss
  • 100% avalanche tested
  • 600VDSS drain-to-source voltage
  • 650V @ TJ = 150°C
  • Good system efficiency
  • RoHS compliant
  • NTHL041N60S5H power MOSFET:
    • Fast switching performance with robust body diode
    • 108nC (typical) ultra-low gate charge (Qg)
    • 643pF (typical) low effective output capacitance
    • 32.8mΩ RDS(on) (typical)
  • NTHL099N60S5 power MOSFET:
    • Optimized capacitance
    • 48nC (typical) ultra-low gate charge (Qg)
    • 642pF (typical) low time related output capacitance
    • 79.2mΩ RDS(on) (typical)

Applications

  • Telecommunication
  • Server power supplies
  • Cloud system
  • UPS
  • Industrial power supplies
  • EV charger

Datasheets

View Results ( 5 ) Page
Artikelnummer Datablad Id - Kontinuerlig dräneringsström Pd - Effektavledning Qg - Gate-laddning Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Vds - Dräneringskällans genombrottsspänning Rds på - Dräneringskällans resistans Antal kanaler Transistorns polaritet Teknologi Monteringsstil RoHS - Mouser
NTHL099N60S5 NTHL099N60S5 Datablad 33 A 184 W 48 nC - 30 V, 30 V 4 V 600 V 99 mOhms 1 Channel N-Channel Si Through Hole E
NTD280N60S5Z NTD280N60S5Z Datablad 13 A 89 W 17.9 nC - 20 V, 20 V 4 V 600 V 280 mOhms 1 Channel N-Channel Si SMD/SMT Y
NTHL120N60S5Z NTHL120N60S5Z Datablad 28 A 160 W 40 nC - 20 V, 20 V 4 V 600 V 120 mOhms 1 Channel N-Channel Si Through Hole Y
NTHL041N60S5H NTHL041N60S5H Datablad 57 A 329 W 108 nC - 30 V, 30 V 4.3 V 600 V 41 mOhms 1 Channel N-Channel Si Through Hole E
NTMT061N60S5H NTMT061N60S5H Datablad 41 A 250 W 73.6 nC 30 V 4.3 V 600 V 61 mOhms 1 Channel N-Channel Si SMD/SMT Y
Publicerad: 2021-08-27 | Uppdaterad: 2025-10-06