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onsemi MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low VCE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (hFE) from 210 to 460 and a low VCE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low VCE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.

Features

  • Moisture Sensitivity Level 1 (MSL 1)
  • ESD protection:
    • Human body model >4000V
    • Machine model >400V
  • AEC-Q101 qualified and PPAP capable
  • Pb and halogen/BFR free
  • RoHS compliant

Specifications

  • High hFE, 210 to 460
  • Low VCE(sat) <0.5V
  • 60VDC collector-base and collector-emitter voltage
  • 7V emitter-base voltage
  • 150mW power dissipation
  • Collector current:
    • 100mADC - continuous
    • 200mADC - peak
  • 150°C junction temperature

Applications

  • Reverse battery protection
  • DC-DC converter output driver
  • High-speed switching

Dimension Diagram

Mechanical Drawing - onsemi MSD1819A-R General Purpose & Low VCE Transistor
Publicerad: 2023-12-14 | Uppdaterad: 2024-01-30