NXP Semiconductors A5G35S004N Evaluation Board
NXP Semiconductors A5G35S004N Evaluation Board is used with the A5G35S004N Airfast RF Power GaN Transistor. The board is an unmatched device for wide frequency range utilization. It has a 48V GaN discrete transistor, 500-5800MHz, and a 36.6dBm peak (5W).
Features
- 48V GaN discrete transistor
- At 12.1dB OBO for 3400-3600MHz
- 24.5dBm avg. (0.3W)
- 19dB gain
- 20% drain efficiency (Class AB)
- 500-5800MHz
- 36.6dBm peak (5W)
- DFN 4.5 x 4 over-molded plastic package
- Single-ended, unmatched
Typical Lineup
Publicerad: 2022-04-26
| Uppdaterad: 2022-10-28