MACOM CGHV59070 70W RF Power GaN HEMT
MACOM CGHV59070 RF Power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides a general-purpose, broadband solution to a variety of RF and microwave applications. Operating from a 50V rail, the module delivers high efficiency, high gain, and wide bandwidth capabilities. This 70W internally matched GaN HEMT is ideal for linear and compressed amplifier circuits. MACOM CGHV59070 70W RF Power GaN HEMT is offered in a 440224 package.
Features
- 4.4GHz to 5.9GHz operation
- 90W POUT typical at 50V
- 14dB power gain
- 55% drain efficiency
- Internally matched
Applications
- Marine radar
- Weather monitoring
- Air traffic control
- Maritime vessel traffic control
- Port security
- Troposcatter communications
- Beyond line of sight (BLOS)
- Satellite communications
Publicerad: 2017-01-27
| Uppdaterad: 2024-01-22