Infineon Technologies TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Features
- 650V breakthrough voltage
- Compared to 'HighSpeed 3' family:
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCE(sat)
- Co-packed with Infineon Technologies’s new 'Rapid' Si-diode technology
- Low Coss/Eoss
- Mild positive temperature coefficient VCE(sat)
- 50V increase in the bus voltage possible without compromising reliability
- Temperature stability of VF
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- Higher power density designs
Applications
- PFC + PWM topologies in:
- Welding
- UPS
- Solar
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