Infineon Technologies CoolSiC™ Hybrid IGBTs
Infineon Technologies CoolSiC™ Hybrid IGBTs combine a 650V TRENCHSTOP™ 5 fast-switching IGBT (Insulated-Gate Bipolar Transistor) with a CoolSiC™ Schottky Diode. These devices are optimized to enable a cost-efficient performance boost for fast-switching automotive applications.
The combination of a best-in-class IGBT with a Silicon Carbide (SiC) diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the reverse recovery charge-free unipolar CoolSiC Schottky Diode, the power loss of the IGBT will be reduced significantly over silicon-only solutions. This reduction makes these devices ideal for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive onboard charger applications. These features result in a better margin for low-complexity design-in activities.
The Infineon Technologies CoolSiC Hybrid IGBTs are offered in PG-TO247-3 or PG-TO263-7-HV-ND4.2 packages and are AEC-Q101/100 qualified for use in automotive applications.
Features
- Qualified according to AEC-Q101/100
- Best-in-class efficiency in hard switching and resonant topologies
- No reverse or forward recovery charge
- Robust against surge currents
- 650V break-down voltage
- Low gate charge (QG)
- -40°C to +175°C operating junction temperature range
- Pb-free lead plating and RoHS-compliant
Applications
- Onboard chargers
- Power Factor Correction (PFC)
- DC-DC