GigaDevice D5F1GM9 High-Speed QSPI NAND Flash

GigaDevice D5F1GM9 High-Speed QSPI NAND Flash features breakthrough read speeds and innovative Bad Block Management (BBM) functionality. The GD5F1GM9 series combines NOR Flash's high-speed read performance with NAND Flash's large capacity and cost-effectiveness. These innovations address slow response times and vulnerability to bad block interference associated with traditional SPI NAND Flash. This high-speed QSPI NAND Flash is built on a 24nm process node. The series supports 3V and 1.8V operating voltages along with high-speed read modes. The GigaDevice GD51GM9 is ideal for fast-boot applications in sectors such as security, industrial, and the Internet of Things (IoT).

Features

  • 1GB density
  • Breakthrough read speeds and BBM functionality
  • 3V and 1.8V operating voltages
  • Supports high-speed read modes
    • Continuous Read
    • Cache Read
    • Auto Load Next Page
  • Built on a 24nm process node
  • Continuous read rate
    • Up to 83MB/s at a 166MHz maximum clock frequency (3V version)
    • Up to 66MB/s at a 133MHz maximum clock frequency (1.8V version)
  • -40°C to +85°C operating temperature range

Applications

  • Fast-boot applications
    • Security
    • Industrial
    • IoT

Block Diagram

Block Diagram - GigaDevice D5F1GM9 High-Speed QSPI NAND Flash
Publicerad: 2025-04-18 | Uppdaterad: 2025-07-24