Diotec Semiconductor DI065N08D1-AQ N-Channel Power MOSFET

Diotec Semiconductor DI065N08D1-AQ N-Channel Power MOSFET provides 80V drain-source voltage with advanced trench technology and logic-level gate drive. This MOSFET is AEC-Q101 qualified and features fast switching times, low on-state resistance, low gate charge, and avalanche rating in a compact TO-252AA (D-PAK) package. The DI065N08D1-AQ N-channel power MOSFET is compliant with RoHS (exemption 7a), REACH, and Conflict Minerals standards. Typical applications include DC/DC converters, power supplies, DC drives, and synchronous rectifiers.

Features

  • Advanced trench technology
  • Logic-level gate drive
  • Low on state resistance
  • Fast switching times
  • Low gate charge
  • Avalanche rated
  • RoHS (exemption 7a), REACH, and Conflict Minerals compliant

Applications

  • DC/DC converters
  • Power supplies
  • DC drives
  • Synchronous rectifiers

Specifications

  • 80V drain-source voltage
  • ±20V continuos gate-source-voltage
  • 62.5W power dissipation
  • 65A continuous drain current
  • 300A peak drain current
  • 52A continuous source current
  • 100A peak source current
  • 25.6mJ single pulse avalanche energy
  • UL 94V-0 case material
  • 0.32g approximate weight
  • Moisture Sensitivity Level (MSL) 3

Performance Graphs

Performance Graph - Diotec Semiconductor DI065N08D1-AQ N-Channel Power MOSFET

Dimensions

Mechanical Drawing - Diotec Semiconductor DI065N08D1-AQ N-Channel Power MOSFET
Publicerad: 2025-11-19 | Uppdaterad: 2025-12-05