Diodes Incorporated ZXMH MOSFET H-Bridges
Diodes Incorporated ZXMH MOSFET H-Bridges feature low on-resistance achievable with low gate drive. Diodes Incorporated ZXMH MOSFET H-Bridges provide 2 x N + 2 x P channels in a SOIC package and low voltage (Vgs = 4.5V) gate drive. Diodes Inc ZXMH MOSFET H-Bridge devices are ideal for DC motor control and DC-AC inverter applications.Features
- 2 x N + 2 x P channels in a SOIC package
- Low voltage (VGS = 4.5V) gate drive
Applications
- DC Motor control
- DC-AC Inverters
Package Diagram
View Results ( 4 ) Page
| Artikelnummer | Vds - Dräneringskällans genombrottsspänning | Id - Kontinuerlig dräneringsström | Rds på - Dräneringskällans resistans | Datablad |
|---|---|---|---|---|
| ZXMHC6A07N8TC | 60 V | 1.8 A, 1.42 A | 250 mOhms, 400 mOhms | ![]() |
| ZXMHC10A07N8TC | 100 V | 1 A, 850 mA | 700 mOhms, 1.45 Ohms | ![]() |
| ZXMHC3A01N8TC | 30 V | 2.72 A, 2.06 A | 180 mOhms, 330 mOhms | ![]() |
| ZXMHC3F381N8TC | 30 V | 4.98 A, 4.13 A | 33 mOhms, 55 mOhms | ![]() |
Publicerad: 2010-03-10
| Uppdaterad: 2022-03-11

