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Comchip Technology CPDE5V0U ESD Protection Diode

Comchip Technology CPDE5V0U ESD Protection Diode provides unidirectional ESD protection of one line. This device offers a fast response time, low reverse clamping voltage, and a low leakage current. The peak pulse power (PPP) rating is 169W, and the peak pulse current (IPP) rating is 13A. The Comchip CPDE5V0U has an operating junction temperature (TJ) and storage temperature (TSTG) range of -55°C to +150°C.

Features

  • Unidirectional ESD protection of one line
  • Fast response time
  • Low reverse clamping voltage
  • Low leakage current
  • Halogen-free and RoHS-compliant

Applications

  • Mobile phones
  • Notebooks and handhelds
  • Cameras
  • Displays

Specifications

  • 169W (max.) peak pulse power (PPP) (at TP = 8/20µs)
  • 13A (max.) peak pulse current (IPP) (at TP = 8/20µs)
  • 5V (max.) reverse standoff voltage (VRRM)
  • 1µA (max.) reverse leakage current (IR) (at VRRM = 5V)
  • Breakdown voltage (VBR) (at IT = 1mA) is 6.2V (min.), 7.3V (max.)
  • ESD capability
    • ±25kV air per IEC 61000-4 
    • ±25kV contact per IEC 61000-4-2
  • ±16kV human body model (HBM) ESD voltage per JESD22-A114-B 
  • ±0.4kV machine model (MM) ESD voltage 
  • +260°C maximum lead solder temperature (10s duration) (TL)
  • -55°C to +150°C operation junction and storage temperature range (TJ, TSTG)
  • SOD-723, molded plastic case
  • Terminals are tin-plated and solderable per MIL-STD-750, method 2026
  • A cathode band indicates polarity
  • Any mounting position

Circuit Diagram

Schematic - Comchip Technology CPDE5V0U ESD Protection Diode

Package Dimensions

Mechanical Drawing - Comchip Technology CPDE5V0U ESD Protection Diode
Publicerad: 2025-10-22 | Uppdaterad: 2025-11-13