Microsemi / Microchip AgileSwitch® Phase Leg SiC MOSFET Power Modules

Microsemi / Microchip AgileSwitch® Phase Leg SiC (Silicon Carbide) MOSFET Power Modules are built with SiC MOSFETs and SiC Diodes and combine the advantages of both devices. These power modules feature an extremely low inductance SP6LI package with a maximum stray inductance of 3nH. These SP6LI power modules are offered in 1200V and 1700V variants with a case temperature (T_c) of +80°C. Offering higher power density and a compact form factor, the SP6LI package enables a lower quantity of modules in parallel to achieve complete systems, helping designers to downsize their equipment further.

Features

SiC power MOSFET
- Low R_DS(on)
- High-temperature performance
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF

Kelvin source for easy drive
Very low stray inductance
M5 power connectors
Internal thermistor for temperature monitoring
AlN substrate for improved thermal performance
High switching frequency
High efficiency
SP6LI package

Applications

Electric vehicle/hybrid electric vehicle (EV/HEV) powertrain and kinetic energy recovery systems (KERSs)
Aircraft actuation systems
Power generation systems
Switched-mode power supplies