IXYS IXT 200V X4 Ultra Junction Power MOSFETs
IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.
Features
- International standard packages
- Low RDS(ON) and QG
- Avalanche rated
- Low package inductance
- High power density
- Easy to mount
- Space savings
Applications
- Switch-mode and resonant-mode power supplies
- DC-DC converters
- PFC circuits
- AC and DC motor drives
- Robotics and servo controls
Specifications
- 200V drain-source voltage
- 60A, 86A, and 94A continuous drain current options
- 10.6mΩ, 13mΩ, or 21mΩ RDS(on) options
- -55°C to +175°C temperature range
Schematic
Related MOSFETs
IXYS IX4 Ultra-Junction Power MOSFETs
Avalanche-rated, N-channel enhancement mode MOSFETs with 200V drain-source breakdown voltage.
IXYS IXT 200V X4 Ultra Junction Power MOSFETs
N-channel devices with either 10.6mΩ, 13mΩ, or 21mΩ RDS(on) and a 200V maximum drain-source voltage.
IXYS HiPerFET™ Power MOSFETs
High-current HiPerFET™ power MOSFETs for hard switching & resonant mode applications.
Publicerad: 2021-04-19
| Uppdaterad: 2022-03-11