SCTxxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs

ROHM Semiconductor SCT3xxxAW7/SCT3xxxKW7 SiC Trench-Type 7-Pin MOSFETs utilize a proprietary trench gate structure to reduce ON resistance by 50% and input capacitance by 35% over planar-type SiC MOSFETs. The MOSFETs include an additional pin that separates the driver and power source pins, eliminating the inductance component's effects in reducing Vgs, ensuring faster switching speeds. The ROHM Semiconductor Trench-Type MOSFETs feature a high voltage resistance, low ON resistance, fast switching speed, simple to drive, and easy to parallel.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 650V 60m 3rd Gen TO-263-7L
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1 757På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 38 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 159 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7L
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1 718På lager
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Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 650V 120m 3rd Gen TO-263-7L
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2 763På lager
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Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 1200V 40m 3rd Gen TO-263-7L
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496På lager
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Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 650V 70A N-CH SIC
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978På lager
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Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 1.2KV 30A N-CH SIC
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369På lager
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Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 30 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC + 175 C 159 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 650V 80m 3rd Gen TO-263-7L
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855På lager
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Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 29 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 125 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar Transistor SiC MOSFET 1200V 105m 3rd Gen TO-263-7L
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766På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 23 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 125 W Enhancement